References
Schubert, E. F. Light-Emitting Diodes 2nd edn (Cambridge Univ. Press, 2006).
Nakamura, S., Harada, Y. & Seno, M. Novel metalorganic chemical vapor deposition system for GaN growth. Appl. Phys. Lett. 58, 2021–2023 (1991).
Article Google Scholar
Amano, H., Kito, M., Hiramatsu, K. & Akasaki, I. P-type conduction in Mg-doped GaN treated with low-energy electron beam irradiation (LEEBI). Jpn J. Appl. Phys. 28, 2112–2114 (1989).
Article Google Scholar
Nakamura, S., Mukai, T., Senoh, M. & Iwasa, N. Thermal annealing effects on p-type Mg-doped GaN films. Jpn J. Appl. Phys. 31, L139–L142 (1992).
Article Google Scholar
Nakamura, S., Senoh, M., Iwasa, N. & Nagahama, S. I. High-brightness InGaN blue, green and yellow light-emitting diodes with quantum well structures. Jpn J. Appl. Phys. 34, L797–L799 (1995).
Article Google Scholar
Virey, E. & Bouhamri, Z. MicroLED Displays—Market, Industry and Technology Trends 2021 Report Technical Report (Yole Developpement, 2021).
Zhang, L., Ou, F., Chong, W. C., Chen, Y. & Li, Q. Wafer-scale monolithic hybrid integration of Si-based IC and III–V epi-layers—a mass manufacturable approach for active matrix micro-LED micro-displays: active matrix micro-LED micro displays made with monolithic hybrid integration. J. Soc. Inf. Disp. 26, 137–145 (2018).
Article Google Scholar
Murawski, C., Leo, K. & Gather, M. C. Efficiency roll-off in organic light-emitting diodes. Adv. Mater. 25, 6801–6827 (2013).
Article Google Scholar
Tian, P. et al. Aging characteristics of blue InGaN micro-light emitting diodes at an extremely high current density of 3.5 kA cm2. Semiconductor Sci. Technol. 31, 045005 (2016).
Article Google Scholar
Pezeshki, B., Tselikov, A., Danesh, C. & Kalman, R. 8x 2Gb/s LED-based optical link at 420nm for chip-to-chip applications. In 2021 European Conference on Optical Communication (ECOC) 1–3 (IEEE, 2021).
Olivier, F. et al. Influence of size-reduction on the performances of GaN-based micro-LEDs for display application. J. Lumin. 191, 112–116 (2017).
Article Google Scholar
Templier, F. et al. GaN-based emissive microdisplays: a very promising technology for compact, ultra-high brightness display systems. SID Symp. Dig. Tech. Pap. 47, 1013–1016 (2016).
Article Google Scholar
Chen, H. W., Lee, J. H., Lin, B. Y., Chen, S. & Wu, S. T. Liquid crystal display and organic light-emitting diode display: present status and future perspectives. Light Sci. Appl. 7, 17168 (2018).
Article Google Scholar
Huang, Y., Hsiang, E. L., Deng, M. Y. & Wu, S. T. Mini-LED, micro-LED and OLED displays: present status and future perspectives. Light Sci. Appl. 9, 105 (2020).
Article Google Scholar
Chen, H., Tan, G. & Wu, S. T. Ambient contrast ratio of LCDs and OLED displays. Opt. Express 25, 33643 (2017).
Article Google Scholar
Huang, Y. et al. Prospects and challenges of mini-LED and micro-LED displays. J. Soc. Inf. Disp. 27, 387–401 (2019).
Article Google Scholar
Bulashevich, K. A. & Karpov, S. Y. Impact of surface recombination on efficiency of III-nitride light-emitting diodes. Phys. Status Solidi 10, 480–484 (2016).
Google Scholar
Wong, M. S. et al. Improved performance of AlGaInP red micro-light-emitting diodes with sidewall treatments. Opt. Express 28, 5787 (2020).
Article Google Scholar
Behrman, K. & Kymissis, I. Enhanced microLED efficiency via strategic pGaN contact geometries. Opt. Express 29, 14841–14852 (2021).
Boroditsky, M. et al. Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes. J. Appl. Phys. 87, 3497–3504 (2000).
Article Google Scholar
Wong, M. S. et al. High efficiency of III-nitride micro-light-emitting diodes by sidewall passivation using atomic layer deposition. Opt. Express 26, 21324 (2018).
Article Google Scholar
Weisbuch, C. Review—on the search for efficient solid state light emitters: past, present, future. ECS J. Solid State Sci. Technol. 9, 016022 (2020).
Article Google Scholar
Iida, D. et al. 633-nm InGaN-based red LEDs grown on thick underlying GaN layers with reduced in-plane residual stress. Appl. Phys. Lett. 116, 162101 (2020).
Article Google Scholar
Auf der Maur, M., Pecchia, A., Penazzi, G., Rodrigues, W. & Di Carlo, A. Efficiency drop in green InGaN/GaN light emitting diodes: the role of random alloy fluctuations. Phys. Rev. Lett. 116, 027401 (2016).
Article Google Scholar
Cok, R. S. et al. Inorganic light-emitting diode displays using micro-transfer printing: LED displays using micro-transfer printing. J. Soc. Inf. Disp. 25, 589–609 (2017).
Article Google Scholar
Qian, L. et al. Key challenges towards the commercialization of quantum-dot light-emitting diodes. SID Symp. Dig. Tech. Pap. 48, 55–57 (2017).
Article Google Scholar
Liu, Z. et al. Micro-light-emitting diodes with quantum dots in display technology. Light Sci. Appl. 9, 83 (2020).
Article Google Scholar
Jiang, H. X., Jin, S. X., Li, J., Shakya, J. & Lin, J. Y. III-nitride blue microdisplays. Appl. Phys. Lett. 78, 1303–1305 (2001).
Article Google Scholar
Choi, H., Jeon, C. & Dawson, M. Fabrication of matrix-addressable micro-LED arrays based on a novel etch technique. J. Cryst. Growth 268, 527–530 (2004).
Article Google Scholar
Chong, W. C., Cho, W. K., Liu, Z. J., Wang, C. H. & Lau, K. M. 1700 pixels per inch (ppi) passive-matrix micro-LED display powered by ASIC. In 2014 IEEE Compound Semiconductor Integrated Circuit Symposium (CSICS) 1–4 (IEEE, 2014).
Kymissis, I. & Behrman, K. A brief survey of microLED technologies. SID Symp. Dig. Tech. Pap. 51, 650–652 (2020).
Article Google Scholar
Chung, K., Sui, J., Demory, B. & Ku, P. C. Color mixing from monolithically integrated InGaN-based light-emitting diodes by local strain engineering. Appl. Phys. Lett. 111, 041101 (2017).
Article Google Scholar
Li, P. et al. Monolithic full-color microdisplay using patterned quantum dot photoresist on dual-wavelength LED epilayers. J. Soc. Inf. Disp. 29, 157–165 (2021).
Qi, Y., Liang, H., Tang, W., Lu, Z. & Lau, K. M. Dual wavelength InGaN/GaN multi-quantum well LEDs grown by metalorganic vapor phase epitaxy. J. Cryst. Growth 272, 333–340 (2004).
Article Google Scholar
Furukawa, Y. et al. Monolithic implementation of elemental devices for optoelectronic integrated circuit in lattice-matched Si/III–V–N alloy layers. Jpn J. Appl. Phys. 45, L920–L922 (2006).
Article Google Scholar
Guha, S. & Bojarczuk, N. A. Ultraviolet and violet GaN light emitting diodes on silicon. Appl. Phys. Lett. 72, 415–417 (1998).
Article Google Scholar
Tran, C. A., Osinski, A., Karlicek, R. F. & Berishev, I. Growth of InGaN/GaN multiple-quantum-well blue light-emitting diodes on silicon by metalorganic vapor phase epitaxy. Appl. Phys. Lett. 75, 1494–1496 (1999).
Article Google Scholar
Guha, S. & Bojarczuk, N. A. Multicolored light emitters on silicon substrates. Appl. Phys. Lett. 73, 1487–1489 (1998).
Article Google Scholar
Ponce, F. A. & Bour, D. P. Nitride-based semiconductors for blue and green light-emitting devices. Nature 386, 351–359 (1997).
Article Google Scholar
Zhu, D., Wallis, D. J. & Humphreys, C. J. Prospects of III-nitride optoelectronics grown on Si. Rep. Prog. Phys. 76, 106501 (2013).
Article Google Scholar
Sheng, J., Jeong, H. J., Han, K. L., Hong, T. & Park, J. S. Review of recent advances in flexible oxide semiconductor thin-film transistors. J. Inf. Disp. 18, 159–172 (2017).
Article Google Scholar
Sposili, R. S. & Im, J. S. Sequential lateral solidification of thin silicon films on SiO2. Appl. Phys. Lett. 69, 2864–2866 (1996).
Article Google Scholar
Tull, B. R. et al. High brightness, emissive microdisplay by integration of III–V LEDs with thin film silicon transistors. SID Symp. Dig. Tech. Pap. 46, 375–377 (2015).
Article Google Scholar
Li, Z. et al. Monolithic integration of light-emitting diodes and power metal-oxide-semiconductor channel high-electron-mobility transistors for light-emitting power integrated circuits in GaN on sapphire substrate. Appl. Phys. Lett. 102, 192107 (2013).
Article Google Scholar
Gong, Z. et al. Efficient flip-chip InGaN micro-pixellated light-emitting diode arrays: promising candidates for micro-displays and colour conversion. J. Phys. D 41, 094002 (2008).
Article Google Scholar
Kang, C. M. et al. Hybrid full-color inorganic light-emitting diodes integrated on a single wafer using selective area growth and adhesive bonding. ACS Photon. 5, 4413–4422 (2018).
Article Google Scholar
Geum, D. M. et al. Strategy toward the fabrication of ultrahigh-resolution micro-LED displays by bonding-interface-engineered vertical stacking and surface passivation. Nanoscale 11, 23139–23148 (2019).
Article Google Scholar
Zhang, L. et al. Wafer scale hybrid monolithic integration of Si-based IC and III–V epilayers—a mass manufacturable approach for active matrix micro-LED displays. SID Symp. Dig. Tech. Pap. 49, 786–789 (2018).
Article Google Scholar
Um, J. G. et al. Active-matrix GaN u-LED display using oxide thin-film transistor backplane and flip chip LED bonding. Adv. Electron. Mater. 5, 1800617 (2019).
Article Google Scholar
Kim, J. C., Yi, S. & Mars, D. E. Nanostructure optoelectronic device with independently controllable junctions. US patent 8659037B2 (2014); //patents.google.com/patent/US8659037B2/en
Park, S. I. et al. Printed assemblies of inorganic light-emitting diodes for deformable and semitransparent displays. Science 325, 977–981 (2009).
Article Google Scholar
Meitl, M. et al. Passive matrix displays with transfer-printed microscale inorganic LEDs. SID Symp. Dig. Tech. Pap. 47, 743–746 (2016).
Article Google Scholar
Bibl, A., Higginson, J. A., Clara, S., Law, H. F. S. & Hu, H. H. Method of transferring a micro device. US patent 8333860B1 (2012); //patents.google.com/patent/US8333860B1
Behrman, K. et al. Early defect identification for micro light-emitting diode displays via photoluminescent and cathodoluminescent imaging. J. Soc. Inf. Disp. 29, 264–274 (2021).
Article Google Scholar
Henley, F. J. Evaluating in-process test compatibility of proposed mass-transfer technologies to achieve efficient, high-yield microLED mass-production. SID Symp. Dig. Tech. Pap. 50, 232–235 (2019).
Article Google Scholar
Bower, C. A. et al. Mass transfer throughput and yield using elastomer stamps. SID Symp. Dig. Tech. Pap. 52, 849–852 (2021).
Article Google Scholar
Yeh, H. J. & Smith, J. Fluidic self-assembly for the integration of GaAs light-emitting diodes on Si substrates. IEEE Photon. Technol. Lett. 6, 706–708 (1994).
Article Google Scholar
Saeedi, E., Kim, S. & Parviz, B. A. Self-assembled crystalline semiconductor optoelectronics on glass and plastic. J. Micromech. Microeng. 18, 075019 (2008).
Article Google Scholar
Verma, A., Hadley, M., Yeh, H. J. & Smith, J. Fluidic self-assembly of silicon microstructures. In Proc. 45th Electronic Components and Technology Conference 1263–1268 (IEEE, 1995).
Rumpler, J., Perkins, J. M. & Fonstad, C. G. Jr Optoelectronic integration using statistical assembly and magnetic retention of heterostructure pills. In Conference on Lasers and Electro-Optics (IEEE, 2004); //ieeexplore.ieee.org/document/1360716
Cheng, D. I. et al. Use of patterned magnetic films to retain and orient micro-components during fluidic assembly. J. Appl. Phys. 105, 07C123 (2009).
Article Google Scholar
Gengel, G., Hadley, M., Pounds, T., Schatz, K. & Drzaic, P. RFID tags and processes for producing rfid tags. US patent 8350703B2 (2014); //patents.google.com/patent/US8350703
Schuele, P. J., Sasaki, K., Ulmer, K. & Lee, J. J. Display with surface mount emissive elements. US patent US9825202B2(2017); //patents.google.com/patent/US9825202B2/en
Arakawa, Y. & Sakaki, H. Multidimensional quantum well laser and temperature dependence of its threshold current. Appl. Phys. Lett. 40, 939–941 (1982).
Article Google Scholar
Petroff, P. M., Gossard, A. C. & Wiegmann, W. Structure of AlAs–GaAs interfaces grown on (100) vicinal surfaces by molecular beam epitaxy. Appl. Phys. Lett. 45, 620–622 (1984).
Article Google Scholar
Ando, S. & Fukui, T. Facet growth of AlGaAs on GaAs with SiO2 gratings by MOCVD and applications to quantum well wires. J. Cryst. Growth 98, 646–652 (1989).
Article Google Scholar
Hiruma, K. et al. GaAs free-standing quantum-size wires. J. Appl. Phys. 74, 3162–3171 (1993).
Article Google Scholar
Hiruma, K. et al. Growth and optical properties of nanometer-scale GaAs and InAs whiskers. J. Appl. Phys. 77, 447–462 (1995).
Article Google Scholar
Chen, C. C. & Yeh, C. C. Large-scale catalytic synthesis of crystalline gallium nitride nanowires. Adv. Mater. 12, 738–741 (2000).
Article Google Scholar
Fan, H. et al. Template-assisted large-scale ordered arrays of ZnO pillars for optical and piezoelectric applications. Small 2, 561–568 (2006).
Article Google Scholar
Qian, F. et al. Multi-quantum-well nanowire heterostructures for wavelength-controlled lasers. Nat. Mater. 7, 701–706 (2008).
Article Google Scholar
Chen, H. S. et al. Light-emitting device with regularly patterned growth of an InGaN/GaN quantum-well nanorod light-emitting diode array. Opt. Lett. 38, 3370 (2013).
Article Google Scholar
Tomioka, K., Kobayashi, Y., Motohisa, J., Hara, S. & Fukui, T. Selective-area growth of vertically aligned GaAs and GaAs/AlGaAs core-shell nanowires on Si(111) substrate. Nanotechnology 20, 145302 (2009).
Article Google Scholar
Blumberg, C. et al. Spatially controlled VLS epitaxy of gallium arsenide nanowires on gallium nitride layers. CrystEngComm 22, 1239–1250 (2020).
Article Google Scholar
C.-H., L. et al. GaN/ZnO nanotube heterostructure light-emitting diodes fabricated on Si. IEEE J. Sel. Top. Quantum Electron. 17, 966–970 (2011).
Article Google Scholar
Gardner, N. et al. Method of making a light emitting diode array on a backplane. World patent 2016100657A3 (2019); //patents.google.com/patent/WO2016100657A3
Ra, Y. H. et al. Full-color single nanowire pixels for projection displays. Nano Lett. 16, 4608–4615 (2016).
Article Google Scholar
Sekiguchi, H., Kishino, K. & Kikuchi, A. Emission color control from blue to red with nanocolumn diameter of InGaN/GaN nanocolumn arrays grown on same substrate. Appl. Phys. Lett. 96, 231104 (2010).
Article Google Scholar
Funato, M. et al. Emission color tunable light-emitting diodes composed of InGaN multifacet quantum wells. Appl. Phys. Lett. 93, 021126 (2008).
Article Google Scholar
Wang, R. et al. Color-tunable, phosphor-free InGaN nanowire light-emitting diode arrays monolithically integrated on silicon. Opt. Express 22, A1768 (2014).
Article Google Scholar
Wang, R. et al. Tunable, full-color nanowire light emitting diode arrays monolithically integrated on Si and sapphire. Proc. SPIE //doi.org/10.1117/12.2213741 (2016).
Hong, Y. J. et al. Visible-color-tunable light-emitting diodes. Adv. Mater. 23, 3284–3288 (2011).
Article Google Scholar
Daami, A. et al. Green InGaN/GaN based LEDs: high luminance and blue shift. Proc. SPIE 10918, 109180M (2019).
Ozden, I. & Takeuchi, T. A matrix addressable 1024 element blue light emitting InGaN QW diode array. Phys. Status Solidi 188, 139–142 (2001).
Article Google Scholar
Rae, B. R. et al. CMOS driven micro-pixel LEDs integrated with single photon avalanche diodes for time resolved fluorescence measurements. J. Phys. D 41, 094011 (2008).
Article Google Scholar
Belton, C. R. et al. New light from hybrid inorganic-organic emitters. J. Phys. D 41, 094006 (2008).
Article Google Scholar
Sechrist, S. I-Zone turns seven. Inf. Disp. 34, 14–17 (2018).
Google Scholar
Werner, K. The best of CES 2019. Inf. Disp. 35, 32–35 (2019).
Google Scholar
Elfström, D. et al. Mask-less ultraviolet photolithography based on CMOS-driven micro-pixel light emitting diodes. Opt. Express 17, 23522 (2009).
Article Google Scholar
Choi, C. et al. Localizing seizure activity in the brain using implantable micro-LEDs with quantum dot downconversion. Adv. Mater. Technol. 3, 1700366 (2018).
Article Google Scholar
Islim, M. S. et al. Towards 10 Gb/s orthogonal frequency division multiplexing-based visible light communication using a GaN violet micro-LED. Photon. Res. 5, A35 (2017).
Article Google Scholar
Chen, Y. Multi-size micro LED displays revealed by Japan and Korea tech giants. LEDinside (9 January 2020).
Biwa, G. et al. Technologies for the crystal LED display system. J. Soc. Inf. Disp. 29, 435–445 (2021).
Article Google Scholar
Chen, Y. glō unveils RGB micro LED display with 525 ppi. LEDinside (21 January 2020).
Chen, Y. Micro LED display products progress with Chinese panel makers joining the field. LEDinside (17 May 2019).
Lee, V. Lumiode: ultra high brightness micro-LED displays for AR/MR. Proc. SPIE 11310, 113102S (2020).
Lang, B. JBD shows micro LED display for AR/VR with absurd 3,000,000 nits brightness. Road to VR (9 January 2020).
Chen, Y. AUO showcases micro LED and mini LED technologies targeting applications in post-pandemic era. LEDinside (6 August 2020).
Chen, Y. Automotive and wearable micro LED displays at Display Week 2020 demonstrate mass transfer and bonding breakthroughs. LEDinside (10 September 2020).
Mertens, R. TCL’s CSoT shows a 4-inch 320x180 IGZO microLED display prototype. MicroLED-Info (6 November 2020).
Shih, A. Compound photonics unveils world’s smallest wide field of view 1080p optical engine reference design for smart glasses. Business Wire (16 April 2020).
Lee, V. W., Twu, N. & Kymissis, I. Micro-LED technologies and applications. Inf. Disp. 32, 16–23 (2016).
Google Scholar
Meitl, M. A. et al. Transfer printing by kinetic control of adhesion to an elastomeric stamp. Nat. Mater. 5, 33–38 (2006).
Article Google Scholar
Choi, M. et al. Stretchable active matrix inorganic light-emitting diode display enabled by overlay-aligned roll-transfer printing. Adv. Funct. Mater. 27, 1–10 (2017).
Google Scholar
Zhou, X. et al. Growth, transfer printing and colour conversion techniques towards full-colour micro-LED display. Prog. Quantum Electron. 71, 100263 (2020).
Article Google Scholar
Ra, Y. H., Rashid, R. T., Liu, X., Lee, J. & Mi, Z. Scalable nanowire photonic crystals: molding the light emission of InGaN. Adv. Funct. Mater. 27, 1702364 (2017).
Article Google Scholar
Lee, C. H. et al. GaN/In1−xGaxN/GaN/ZnO nanoarchitecture light emitting diode microarrays. Appl. Phys. Lett. 94, 213101 (2009).
Article Google Scholar
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